AQX IRF7416TRPBF agbakwunyere sekit ic mgbawa ọhụrụ na izizi IRF7416TRPBF
Njirimara ngwaahịa
| Ụdị | Nkọwa |
| Otu | Ngwaahịa Semiconductor pụrụ iche |
| Mfr | Infineon Teknụzụ |
| Usoro | HEXFET® |
| ngwugwu | teepu & Reel (TR) Mpempe akwụkwọ (CT) Digi-Reel® |
| Ọnọdụ ngwaahịa | Na-arụ ọrụ |
| Ụdị FET | P-Chanel |
| Nkà na ụzụ | MOSFET (Metal oxide) |
| Mbupu gaa na voltaji (Vdss) | 30 V |
| Ugbu a – Mkpọpu na-aga n'ihu (Id) @ 25°C | 10A (Ta) |
| Mbanye voltaji (Max Rds On, Min Rds Agban) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Ọnụ ụzọ ámá (Qg) (Max) @ Vgs | 92 nC @ 10V |
| Vgs (Max) | ± 20V |
| Ntinye ike (Ciss) (Max) @ Vds | 1700 pF @ 25V |
| Njirimara FET | - |
| Mgbasa ike (Max) | 2.5W (Ta) |
| Okpomọkụ na-arụ ọrụ | -55°C ~ 150°C (TJ) |
| Ụdị nkwụnye | Ugwu elu |
| Ngwungwu ngwaọrụ ndị na-eweta ihe | 8-SO |
| Ngwungwu / Akpa | 8-SOIC (0.154 ″, obosara 3.90mm) |
| Nọmba ngwaahịa ntọala | IRF7416 |
Akwụkwọ & Mgbasa ozi
| Ụdị akụrụngwa | Njikọ |
| Mpempe akwụkwọ data | IRF7416PbF |
| Akwụkwọ ndị ọzọ metụtara | Sistemụ ọnụọgụ nọmba IR |
| Modul Ọzụzụ Ngwaahịa | Sekit agbakwunyere oke voltaji (Ndị ọkwọ ụgbọ ala ọnụ ụzọ ámá HVIC) |
| Ngwaahịa egosipụtara | Sistemụ nhazi data |
| Akwụkwọ data HTML | IRF7416PbF |
| Ụdị EDA | IRF7416TRPBF nke Ultra Librarian |
| Ụdị ịme anwansị | IRF7416PBF ụdị Saber |
Nkewa gburugburu na mbupụ
| NKWUO | Nkọwa |
| Ọnọdụ RoHS | ROHS3 kwadoro |
| Ọkwa Mmetụta Umi (MSL) | 1 (Akparaghị ókè) |
| Ọnọdụ iru | IHE emetụtaghị ya |
| ECN | EAR99 |
| HTSUS | 8541.29.0095 |
Ngwa ndị ọzọ
| NKWUO | Nkọwa |
| Aha ndị ọzọ | IRF7416TRPBFDKR SP001554262 IRF7416TRPBFCT IRF7416TRPBF-ND IRF7416TRPBFTR |
| Ngwungwu ọkọlọtọ | 4,000 |
IRF7416
Uru
Ọdịdị cell planar maka obosara SOA
Ebuliri maka nnweta sara mbara site n'aka ndị mmekọ nkesa
Ntozu ngwaahịa dịka ọkọlọtọ JEDEC siri dị
Silicon kachasị maka ngwa na-agbanwe n'okpuru <100KHz
Ngwungwu ike elu elu ụlọ ọrụ ọkọlọtọ
Enwere ike ịre ahịa ife
-30V Single P-Channel HEXFET Ike MOSFET na ngwugwu SO-8
Uru
RoHS kwadoro
RDS dị ala (gbanyere)
Ogo nke ụlọ ọrụ mmepụta ihe
Oke dv/dt dị ike
Ngbanwe ngwa ngwa
Oke oke mmiri ozuzo zuru oke
175°C okpomọkụ na-arụ ọrụ
P-Channel MOSFET
Transistor
Transistor bụ angwaọrụ semiconductormmara ahụgbasaama ọ bụịgbanweeakara eletrik naike.Transistor bụ otu n'ime ihe eji ewu ụlọ ọgbara ọhụrụngwá electronic.[1]Ọ mejupụtara yasemiconductor ihe, na-enwekarị ma ọ dịkarịa ala atọọnụ ọnụmaka njikọ na sekit eletrọnịkị.Avoltajima ọ bụugbu aetinyere na otu ụzọ nke transistor's terminal na-achịkwa nke ugbu a site na ụzọ abụọ ọzọ.N'ihi na ike a na-achịkwa (mpụta) nwere ike ịdị elu karịa ike njikwa (ntinye), transistor nwere ike ịkwalite mgbaama.A na-achịkọta ụfọdụ transistor n'otu n'otu, mana ọtụtụ ndị ọzọ ka etinyere n'ime yasekit agbakwunyere.
Austrị-Hungarian ọkà mmụta physics Julius Edgar Lilienfeldtụpụtara echiche nke atransistor mmetụta ubina 1926, ma ọ gaghị ekwe omume ịrụ ngwaọrụ na-arụ ọrụ n'oge ahụ.[2]Ngwa ọrụ izizi arụrụ bụ atransistor-kpọtụrụndị ọkà mmụta sayensị America chepụtara na 1947John BardeennaWalter Brattainmgbe arụ ọrụ n'okpuruWilliam ShockleynaỤlọ nyocha Bell.Ha atọ kesara 1956Nrite Nobel na Fiziksmaka mmezu ha.[3]Ụdị transistor a na-ejikarị eme ihe bụmetal-oxide-semiconductor ubi-mmetụta transistor(MOSFET), nke e mepụtara site naMohamed AtallanaDawon Kahngna Bell Labs na 1959.[4][5][6]Ndị transistors gbanwere mpaghara nke eletrọnịkị, wee meghee ụzọ maka obere na ọnụ alaredio,ihe mgbako, nakọmputa, tinyere ihe ndị ọzọ.
Ọtụtụ transistor ka a na-esi na ya dị ọchasilicon, na ụfọdụ sigermanium, ma ụfọdụ ihe ndị ọzọ semiconductor na-eji mgbe ụfọdụ.Transistor nwere ike ịnwe naanị otu ụdị chaja na-ebu, na transistor mmetụta ubi, ma ọ bụ nwee ụdị chaja abụọ n'ime ya.transistor junction bipolarngwaọrụ.Tụnyere naoghere tube, transistors na-adịkarị obere ma na-achọ obere ike iji rụọ ọrụ.Ụfọdụ tubes oghere nwere uru karịa transistor n'ogo dị elu na-arụ ọrụ ma ọ bụ voltaji arụ ọrụ dị elu.A na-eme ọtụtụ ụdị transistor ka ọ bụrụ nkọwa ọkọlọtọ site n'aka ọtụtụ ndị nrụpụta.
