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ngwaahịa

IPD068P03L3G ihe mbụ eletrọnịkị IC mgbawa MCU BOM dị na ngwaahịa IPD068P03L3G

nkowa nkenke:


Nkọwa ngwaahịa

Mkpado ngwaahịa

Njirimara ngwaahịa

Ụdị Nkọwa
Otu Ngwaahịa Semiconductor pụrụ iche

Transistor – FETs, MOSFET – Single

Mfr Infineon Teknụzụ
Usoro OptiMOS™
ngwugwu teepu & Reel (TR)

Mpempe akwụkwọ (CT)

Digi-Reel®

Ọnọdụ ngwaahịa Na-arụ ọrụ
Ụdị FET P-Chanel
Nkà na ụzụ MOSFET (Metal oxide)
Mbupu gaa na voltaji (Vdss) 30 V
Ugbu a – Mkpọpu na-aga n'ihu (Id) @ 25°C 70A (Tc)
Mbanye voltaji (Max Rds On, Min Rds Agban) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Ọnụ ụzọ ámá (Qg) (Max) @ Vgs 91 nC @ 10V
Vgs (Max) ± 20V
Ntinye ike (Ciss) (Max) @ Vds 7720 pF @ 15V
Njirimara FET -
Mgbasa ike (Max) 100W (Tc)
Okpomọkụ na-arụ ọrụ -55°C ~ 175°C (TJ)
Ụdị nkwụnye Ugwu elu
Ngwungwu ngwaọrụ ndị na-eweta ihe PG-TO252-3
Ngwungwu / Akpa TO-252-3, DPak (2 ndu + Tab), SC-63
Nọmba ngwaahịa ntọala IPD068

Akwụkwọ & Mgbasa ozi

Ụdị akụrụngwa Njikọ
Mpempe akwụkwọ data IPD068P03L3 G
Akwụkwọ ndị ọzọ metụtara Ntuziaka Nọmba
Ngwaahịa egosipụtara Sistemụ nhazi data
Akwụkwọ data HTML IPD068P03L3 G
Ụdị EDA IPD068P03L3GATMA1 nke Ultra Librarian

Nkewa gburugburu na mbupụ

NKWUO Nkọwa
Ọnọdụ RoHS ROHS3 kwadoro
Ọkwa Mmetụta Umi (MSL) 1 (Akparaghị ókè)
Ọnọdụ iru IHE emetụtaghị ya
ECN EAR99
HTSUS 8541.29.0095

Ngwa ndị ọzọ

NKWUO Nkọwa
Aha ndị ọzọ IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SP001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Ngwungwu ọkọlọtọ 2,500

Transistor

Transistor bụ angwaọrụ semiconductormmara ahụgbasaama ọ bụịgbanweeakara eletrik naike.Transistor bụ otu n'ime ihe eji ewu ụlọ ọgbara ọhụrụngwá electronic.[1]Ọ mejupụtara yasemiconductor ihe, na-enwekarị ma ọ dịkarịa ala atọọnụ ọnụmaka njikọ na sekit eletrọnịkị.Avoltajima ọ bụugbu aetinyere na otu ụzọ nke transistor's terminal na-achịkwa nke ugbu a site na ụzọ abụọ ọzọ.N'ihi na ike a na-achịkwa (mpụta) nwere ike ịdị elu karịa ike njikwa (ntinye), transistor nwere ike ịkwalite mgbaama.A na-achịkọta ụfọdụ transistor n'otu n'otu, mana ọtụtụ ndị ọzọ ka etinyere n'ime yasekit agbakwunyere.

Austrị-Hungarian ọkà mmụta physics Julius Edgar Lilienfeldtụpụtara echiche nke atransistor mmetụta ubina 1926, ma ọ gaghị ekwe omume ịrụ ngwaọrụ na-arụ ọrụ n'oge ahụ.[2]Ngwa ọrụ izizi arụrụ bụ atransistor-kpọtụrụndị ọkà mmụta sayensị America chepụtara na 1947John BardeennaWalter Brattainmgbe arụ ọrụ n'okpuruWilliam ShockleynaỤlọ nyocha Bell.Ha atọ kesara 1956Nrite Nobel na Fiziksmaka mmezu ha.[3]Ụdị transistor a na-ejikarị eme ihe bụmetal-oxide-semiconductor ubi-mmetụta transistor(MOSFET), nke e mepụtara site naMohamed AtallanaDawon Kahngna Bell Labs na 1959.[4][5][6]Ndị transistors gbanwere mpaghara nke eletrọnịkị, wee meghee ụzọ maka obere na ọnụ alaredio,ihe mgbako, nakọmputa, tinyere ihe ndị ọzọ.

Ọtụtụ transistor ka a na-esi na ya dị ọchasilicon, na ụfọdụ sigermanium, ma ụfọdụ ihe ndị ọzọ semiconductor na-eji mgbe ụfọdụ.Transistor nwere ike ịnwe naanị otu ụdị chaja na-ebu, na transistor mmetụta ubi, ma ọ bụ nwee ụdị chaja abụọ n'ime ya.transistor junction bipolarngwaọrụ.Tụnyere naoghere tube, transistors na-adịkarị obere ma na-achọ obere ike iji rụọ ọrụ.Ụfọdụ tubes oghere nwere uru karịa transistor n'ogo dị elu na-arụ ọrụ ma ọ bụ voltaji arụ ọrụ dị elu.A na-eme ọtụtụ ụdị transistor ka ọ bụrụ nkọwa ọkọlọtọ site n'aka ọtụtụ ndị nrụpụta.


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